Home chevron_right Sensors chevron_right UV Sensors 
German SGLUX Silicon Carbide UV Photodiode SG01M–A5
German SGLUX Silicon Carbide UV Photodiode
German SGLUX Silicon Carbide UV Photodiode

German SGLUX Silicon Carbide UV Photodiode - SG01M–A5

1. Uses silicon carbide (SiC) material
2. Suitable for UVA band
3. Effective detection area 0.2mm2
4. 10mW/cm2 peak irradiance produces approximately 740nA current
5. High chip stability (certified by German PTB)

Product Model: SG01M–A5

Product Introduction

I.Silicon Carbide UV PhotodiodeSG01M–A5 Features:

1. Uses silicon carbide (SiC) material

2. Suitable for UVA band

3. Effective detection area 0.2mm2

4. 10mW/cm2 peak irradiance produces approximately 740nA current

5. High chip stability (certified by German PTB)

About Silicon Carbide (SiC) Material:

SiC can withstand extreme radiation hardness, nearly perfect visible blindness, low dark current, high-speed response, and low noise; these features make SiC a suitable material for visible-blind UV detectors. SiC detectors can operate permanently at temperatures up to 170°C, and the temperature coefficient of the signal (responsivity) is also low, <0.1%/K. Due to low noise (dark current at fA level), very low UV radiation intensities can be reliably measured (with appropriate amplifiers).

SiC photodiodes can be used as unfiltered broadband detection devices or with optical filters, providing response to UVA, UVB, and UVC bands.


II. Silicon Carbide UV Photodiode SG01M–A5 Technical Parameters:

Model

SG01M-A5

SG01M-A18

Spectral Characteristics

Responsivity

0.037A/W

0.037A/W

Wavelength Typical Value

331nm

331nm

Wavelength Range (S=0.1*Smax)

309-367nm

309-367nm

Visible Blindness (Smax/S>405nm)

>1010

>1010

General Characteristics (25°C)

Effective Detection Area

0.2mm2

0.2mm2

Dark Current (1V Reverse Bias)

0.7fA

0.7fA

Capacitance

50pF

50pF

Short-Circuit Current (10mW/cm2 Peak Irradiance)

Approximately 740nA

Approximately 740nA

Temperature Coefficient

<0.1%/K

<0.1%/K

Ratings

Operating Temperature

-55~+170℃

-55~+170℃

Storage Temperature

-55~+170℃

-55~+170℃

Soldering Temperature (3S)

260℃

260℃

Reverse Voltage VRmax

20V

20V

Physical Characteristics

Sealed in T05 metal housing, 1 pin insulated, 1 pin grounded

Sealed in T018 metal housing, 1 pin insulated, 1 pin grounded


III. Silicon Carbide UV Photodiode SG01M–A5 Application Areas:

Mainly used for flame control (industrial boilers), water treatment (UV intensity insurance), UV astronomy (array detection), projectile tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight (gifts, cosmetic tools), UV lamp intensity testing for disinfection efficiency (medical devices or household disinfection cabinets), etc.