German SGLUX UV Photodiode - SG01D–5LENS

German SGLUX UV Photodiode SG01D–5LENS Description About Material Silicon Carbide (SiC)

SiC has unique characteristics, can withstand high-intensity radiation, is almost insensitive to visible light, produces low dark current, fast response speed and low noise. These characteristics make SiC a very good material for visible-blind semiconductor UV detectors. SiC detectors can operate continuously at temperatures up to 170°C (338°F). The temperature coefficient of the signal (responsivity) is also very low, < 0.1%/K. Due to low noise (dark current at fA level), it can effectively detect very low UV radiation intensity. Please note that this device requires a corresponding amplifier. (See typical circuit on page 3).

 

German SGLUX UV Photodiode SG01D–5LENS Options

SiC photodiodes are available in seven different effective sensitive areas, ranging from 0.06 mm2 to 36 mm2. The standard version is broadband UVA-UVB-UVC.

Four filtered versions result in stricter spectral response ranges. All photodiodes have sealed metal housings (TO type), either TO18 housings with a diameter of 5.5mm or TO5 housings with a diameter of 9.2mm. Further options are 2 pins (1 insulated, 1 ground) or 3 pins (2 insulated, 1 ground).

German SGLUX UV Photodiode SG01D–5LENS Features

Broadband UVA+UVB+UVC, high chip stability reported by PTB, for flame detection

Radiation sensitive area A = 11.0 mm2
TO5 sealed metal housing and condenser lens, 1 insulated pin and 1 ground pin

10µW/cm2 peak radiation generates approximately 350 nA current

German SGLUX UV Photodiode SG01D–5LENS Parameters

Parameter	Symbol	Value	Unit
Spectral Characteristics
Typical Responsivity at Peak Wavelength	S	0，130	aw
Wavelength of Spectral Responsivity	Λ	280	nm
Response Wavelength Range (S=0.1*Smax)	-	221-358	nm
Visible Blindness (Smax/S>405nm)	VB	> 1010	-
General Characteristics (T=25°C)
Sensitive Area (Chip Size = 0.50 mm2)	A	11，0	mm2
Dark Current (1V Reverse Bias)	Id	1,7	fa
Capacitance	C	125	pF
Short Circuit (at 10µW/cm2 Peak)	Io	350	nA
Temperature Coefficient	Tc	< 0,1	%/K
Ratings
Operating Temperature	Topt	-55...+170	°C
Storage Temperature	Tstor	–55 … +170	°C
Soldering Temperature (3s)	Tsold	260	°C
Reverse Voltage	VRmax	20	V