Home chevron_right Sensors chevron_right UV Detectors 
German SGLUX UV Photodiode SG01M-A18
German SGLUX UV Photodiode

German SGLUX UV Photodiode - SG01M-A18

1. Made of silicon carbide (SiC) material
2. Suitable for UVA band
3. Effective detection area 0.2mm2
4. 10mW/cm2 peak irradiance generates approximately 740nA current
5. High chip stability (certified by German PTB)

Product Model: SG01M-A18

Product Introduction

I. Characteristics of UV Photodiode SG01M-A18:

1. Made of silicon carbide (SiC) material

2. Suitable for UVA band

3. Effective detection area 0.2mm2

4. 10mW/cm2 peak irradiance generates approximately 740nA current

5. High chip stability (certified by German PTB)


II. About Silicon Carbide (SiC) Material:

SiC can withstand extreme radiation hardness, has nearly perfect visible blindness, low dark current, high-speed response, and low noise. These features make SiC an excellent material for visible-blind UV detectors. SiC detectors can operate at temperatures up to 170°C, and the temperature coefficient of the signal (responsivity) is very low, <0.1%/K. Due to low noise (dark current at fA level), very low UV radiation intensities can be reliably measured (with appropriate amplifiers).

SiC photodiodes can be used as unfiltered broadband detection devices or with optical filters to provide response to UVA, UVB, and UVC bands.


III. UV Photodiode SG01M-A18 Application Areas:

Mainly used for flame control (industrial boilers), water treatment (UV intensity safety), UV astronomy (array detection), projectile tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight (gifts, cosmetic devices), UV lamp intensity testing (disinfection efficiency verification for medical devices or household disinfection cabinets), etc.


IV. UV Photodiode SG01M-A18 Technical Parameters:

Model

SG01M-A5

SG01M-A18

Spectral Characteristics

Responsivity

0.037A/W

0.037A/W

Typical Wavelength

331nm

331nm

Wavelength Range (S=0.1*Smax)

309-367nm

309-367nm

Visible Blindness (Smax/S>405nm)

>1010

>1010

General Characteristics (25°C)

Effective Detection Area

0.2mm2

0.2mm2

Dark Current (1V Reverse Bias)

0.7fA

0.7fA

Capacitance

50pF

50pF

Short-Circuit Current (10mW/cm2 Peak Irradiance)

Approximately 740nA

Approximately 740nA

Temperature Coefficient

<0.1%/K

<0.1%/K

Rated Values

Operating Temperature

-55~+170℃

-55~+170℃

Storage Temperature

-55~+170℃

-55~+170℃

Soldering Temperature (3S)

260℃

260℃

Reverse Voltage VRmax

20V

20V

Physical Characteristics

Sealed in T05 metal housing, 1 pin insulated, 1 pin grounded

Sealed in T018 metal housing, 1 pin insulated, 1 pin grounded