German SGLUX UV Photodiode - SG01D-C18

 I. Characteristics of UV Photodiode SG01D-C18:

1. Made of silicon carbide (SiC) material

2. Only for UVC band

3. Photosensitive area: 0.5mm2

4. Generates approximately 6nA current under 10uW/cm2 peak irradiance

5. High chip stability (certified by German PTB)

6. German DVGW certification

II. About Silicon Carbide (SiC) Material:

SiC has extremely special advantages: it can withstand high-intensity radiation, is almost insensitive to visible light, produces low dark current, and has fast response speed. These characteristics make SiC an excellent material for semiconductor UV detectors that can suppress visible light. SiC detectors can operate long-term at temperatures up to 170°C, have low temperature coefficient (<0.1%/K) and low noise, and can effectively monitor very low radiation intensities (with appropriate amplifiers).

III. Technical Parameters of UV Photodiode SG01D-C18:

Model	SG01D-C18
Spectral Characteristics
Sensitivity	0.120A/W
Typical Wavelength	275nm
Wavelength Range (S=0.1*Smax)	225-287nm
Visible Light Suppression Ratio (Smax/S>405nm)	>1010
General Characteristics (25°C)
Photosensitive Area	0.5mm2
Dark Current (1V reverse bias)	1.7fA
Capacitance	125pF
Short Circuit Current (10uW/cm2 peak irradiance)	Approximately 6nA
Temperature Coefficient	<0.1%/K
Ratings
Operating Temperature	-55～+170℃
Storage Temperature	-55～+170℃
Soldering Temperature (3S)	260℃
Reverse Voltage VRmax	20V
Physical Characteristics	TO18 metal package sealed, pin 1 insulated, pin 1 grounded

IV. Application Fields of UV Photodiode SG01D-C18:

Mainly used for flame control (industrial boilers), water treatment (UV intensity insurance), UV astronomy (array detection), bullet tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight (gifts, cosmetic tools), and UV lamp intensity testing (medical devices or disinfection efficiency inspection of household disinfection cabinets), etc.