German SGLUX UV Photodiode - SG01M-C5

UV Photodiode SG01M-C5 Features:

1. Made of silicon carbide (SiC) material

2. Only for UVC band

3. Photosensitive area: 0.2mm2

4. Generates approximately 2400nA current under 10mW/cm2 peak irradiance

5. High chip stability (certified by German PTB)

6. German DVGW certification

About Silicon Carbide (SiC) Material:

SiC has extremely special advantages: it can withstand high-intensity radiation, is almost insensitive to visible light, has low dark current, and fast response speed. These characteristics make SiC an excellent material for suppressing visible light in semiconductor UV detectors. SiC detectors can operate long-term at temperatures up to 170°C, have a low temperature coefficient (<0.1%/K), and low noise, enabling effective detection of very low radiation intensities (with appropriate amplifiers).

UV Photodiode SG01M-C5 Technical Parameters:

Model	SG01M-C5
Spectral Characteristics
Sensitivity	0.120A/W
Typical Wavelength	275nm
Wavelength Range (S=0.1*Smax)	225-287nm
Visible Light Rejection Ratio (Smax/S>405nm)	>1010
General Characteristics (25°C)
Photosensitive Area	0.2mm2
Dark Current (1V reverse bias)	0.7fA
Capacitance	50pF
Short-Circuit Current (10mW/cm2 peak irradiance)	Approximately 2400nA
Temperature Coefficient	<0.1%/K
Ratings
Operating Temperature	-55～+170℃
Storage Temperature	-55～+170℃
Soldering Temperature (3S)	260℃
Reverse Voltage VRmax	20V
Physical Characteristics	Sealed in TO5 metal package, pin 1 insulated, pin 1 grounded

UV Photodiode SG01M-C5 Application Areas:

Mainly used for flame control (industrial boilers), water treatment (UV intensity insurance), UV astronomy (array detection), bullet tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight (gifts, cosmetics), and UV lamp intensity testing (disinfection efficiency verification for medical devices or household disinfection cabinets), etc.