Product Introduction
The 6N138 and 6N139 series combine an aluminum gallium arsenide infrared emitting diode as the emitter, which is optically coupled to a silicon high-speed photodarlington transistor in a plastic DIP8 package, with different lead forming options.
The separate design between the photodiode and the Darlington transistor reduces the base-collector capacitance of the input transistor, thereby increasing the speed by several orders of magnitude compared to conventional phototransistor optocouplers.
1. Optocoupler -Features of 6N138:
High isolation 5000 VRMS
DC input with transistor output
Operating temperature range -40°C to 100°C
REACH compliant
Halogen-free (optional)
MSL Class 1
Regulatory Approvals:
-UL - UL1577
-VDE - EN60747-5-5(VDE0884-5)
-CQC - GB4943.1
2. Optocoupler -Applications of 6N138:
Low current line receivers
Current loop receivers
Interface output to CMOS-LSTTL-TTL
Pulse transformer replacement
Computer peripheral interface
