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German SGLUX UV Photodiode SG01D-B18
German SGLUX UV Photodiode

German SGLUX UV Photodiode - SG01D-B18

1. Made of silicon carbide (SiC) material
2. Only for UVB band
3. Photosensitive area: 0.50mm2
4. Generates approximately 6.25nA current under 10uW/cm2 peak irradiance
5. High chip stability (certified by German PTB)

Product Model: SG01D-B18

Product Introduction

I. Application fields of UV photodiode SG01D-B18:

The UV photodiode SG01D-B18 is mainly used for flame control (industrial boilers), water treatment (UV intensity insurance), UV astronomy (array detection), bullet tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight, and UV lamp intensity testing (disinfection efficiency verification for medical devices or household disinfection cabinets).


II. Characteristics of UV photodiode SG01D-B18:


1. Made of silicon carbide (SiC) material

2. Only for UVB band

3. Photosensitive area: 0.50mm2

4. Generates approximately 6.25nA current under 10uW/cm2 peak irradiance

5. High chip stability (certified by German PTB)


III. About silicon carbide (SiC) material:


SiC has extremely special advantages: it can withstand high-intensity radiation, is almost insensitive to visible light, has low dark current, and fast response speed. These characteristics make SiC an excellent material for making semiconductor UV detectors that can suppress visible light. SiC detectors can operate at temperatures up to 170°C for long periods, have a low temperature coefficient (<0.1%/K), and low noise, enabling effective monitoring of very low radiation intensities (with appropriate amplifiers).


IV. Technical parameters of UV photodiode SG01D-B18:

Model

SG01D-B18

Spectral Characteristics

Sensitivity

0.125A/W

Typical Wavelength

280nm

Wavelength Range (S=0.1*Smax)

231-309nm

Visible Light Rejection Ratio (Smax/S>405nm)

>1010

General Characteristics (25°C)

Photosensitive Area

0.5mm2

Dark Current (1V reverse bias)

1.7fA

Capacitance

125pF

Short Circuit Current (10uW/cm2 peak irradiance)

Approximately 6.25nA

Temperature Coefficient

<0.1%/K

Ratings

Operating Temperature

-55~+170℃

Storage Temperature

-55~+170℃

Soldering Temperature (3s)

260℃

Reverse Voltage VRmax

20V

Physical Characteristics

Sealed in TO18 metal package, 1 pin insulated, 1 pin grounded