GaN/Gallium Nitride - MTC-PD65W1C-FXA1
Flyback valley detection reduces switching losses
Light-load Burst Mode increases efficiency
Best efficiency up to 93%
No-load power consumption below 50mW
Control IC supports frequencies up to 160 kHz
System frequency has jitter to reduce EMI interference
Control IC can directly drive GaN
Product Introduction
This power module is a 65W single C interface, and its output voltage can be controlled by the protocol IC to output 5V/3A, 9V/3A, 15V/3A, 20V/3.25A, etc. Using QR/DCM flyback circuit architecture, it achieves 93% efficiency at 20V heavy load and a power density of 1.5W/cm3. This system uses the same series of control single-chip: QR primary-side control IC drives MTC D-mode GaN FET (MGZ31N65-650V), secondary-side synchronous rectification control IC, and PD3.0 protocol IC, achievingrelativelyBest match.
I.GaN/Gallium Nitride -Features of MTC-PD65W1C-FXA1:
Flyback valley detection reduces switching losses
Light-load Burst Mode increases efficiency
relativelyBest efficiency up to 93%
No-load power consumption below 50mW
Control IC supports frequencies up to 160 kHz
System frequency has jitter to reduce EMI interference
Control IC can directly drive GaN
Advanced protection features are as follows:
(1) VDD overvoltage and undervoltage protection
(2) At startup,relativelylarge peak current protection
(3) Output overvoltage protection
(4) Output short-circuit protection
Can output 65W power
II.GaN/Gallium Nitride -Applications of MTC-PD65W1C-FXA1:
LCD monitor power supply
Power strip with charging interface