Product Introduction
GaN, Chinese name: Gallium Nitride. Under normal temperature and pressure, it has a wurtzite structure. It is the core material for blue light-emitting diodes in today's semiconductor lighting. Industrially, MOCVD and HVPE equipment are used for epitaxial growth.
GaN semiconductor materials have two basic structures: wurtzite (WZ) and zinc blende (ZB). Under normal temperature and pressure, only the wurtzite structure is the stable phase. The wurtzite structure is formed by two hexagonal close-packed sublattices shifted along the c-axis by 3c/8, belonging to the space group P63mc.
I.GaN/Gallium Nitride -Features of MGZ31N65:
650V, 6.5A, RDS (on)(typ.)= 250mΩ@VGS = 8V
Very low QRR
Reduced crossover losses
RoHS compliant and halogen-free packaging
II.GaN/Gallium Nitride -Applications of MGZ31N65:
Power adapters
Low-power SMPS
Lighting equipment
