GaN/Gallium Nitride - MTC-65W1C
Flyback valley detection reduces switching losses
Light load Burst Mode increases efficiency
Best efficiency up to 93%
No-load power consumption below 50mW
Control IC supports frequency up to 160 kHz
System frequency has jitter to reduce EMI interference
Control IC can directly drive GaN
Product Introduction
This power module is a 65W single USB-C interface, with output voltage controlled by the protocol IC supporting 5V/3A, 9V/3A, 15V/3A, 20V/3.25A, etc. Using QR/DCM flyback architecture, it achieves 93% efficiency at 20V heavy load and power density up to 1.5W/cm3. This system uses the same series of control single-chip: QR primary-side control IC drives MTC D-mode GaN FET (MGZ31N65-650V), secondary-side synchronous rectification control IC and PD3.0 protocol IC to achieve optimal matching.Bestmatching.
I.GaN/Gallium Nitride -Features of MTC-65W1C:
Flyback valley detection reduces switching losses
Light load Burst Mode increases efficiency
BestBest efficiency up to 93%
No-load power consumption below 50mW
Control IC supports frequency up to 160 kHz
System frequency has jitter to reduce EMI interference
Control IC can directly drive GaN
Advanced protection features as follows:
(1) VDD over-voltage and under-voltage protection
(2) Turn-onBestlarge peak current protection
(3) Output over-voltage protection
(4) Output short-circuit protection
Can output 65W power
II.GaN/Gallium Nitride -Applications of MTC-65W1C:
