Gallium Nitride/GaN - MGZ18N65
650V, 13A, RDS (on)(typ.)= 150mΩ@VGS = 10V.
Very low QRR
Reduced crossover losses
Easy to drive with common gate drivers
Enables AC-DC bridgeless totem-pole PFC design
- Increased power density
- Reduced system size and weight
- Lower overall system cost
Improved efficiency in both hard-switching and soft-switching circuits
Product Introduction
GaN, Chinese name: Gallium Nitride, has a wurtzite structure at room temperature and pressure. It is the core material of blue light-emitting diodes in today's semiconductor lighting. In industry, MOCVD and HVPE equipment are used for epitaxial growth.
GaN semiconductor materials have two basic structures: wurtzite (WZ) and zinc blende (ZB). At room temperature and pressure, only the wurtzite structure is the stable phase. The wurtzite structure is formed by two hexagonal close-packed sublattices translated along the c-axis by 3c/8, belonging to the space group P63mc.
I.Features of Gallium Nitride/GaN -MGZ18N65:
650V, 13A, RDS (on)(typ.)= 150mΩ@VGS = 10V.
Very low QRR
Reduced crossover losses
Easy to drive with common gate drivers
Enables AC-DC bridgeless totem-pole PFC design
- Increased power density
- Reduced system size and weight
- Lower overall system cost
Improved efficiency in both hard-switching and soft-switching circuits
II. Applications of Gallium Nitride/GaN -MGZ18N65:
Power adapters
Low-power SMPS
Lighting equipment
