German SGLUX UV Photodiode - SG01D Series
1. Made of Silicon Carbide (SiC) material
2. Wide band (UVA+UVB+UVC)
3. Effective detection area 0.5mm2 (SG01D-51LENS sensitive area is 11.0mm2, suitable for flame detection)
4. 10uW/cm2 peak irradiance generates approximately 65nA current (10uW/cm2 peak for SG01D-51LENS approximately 350nA)
5. High chip stability (certified by German PTB)
Product Introduction
I. UV Photodiode - SG01D Features:
1. Made of Silicon Carbide (SiC) material
2. Wide band (UVA+UVB+UVC)
3. Effective detection area 0.5mm2 (SG01D-51LENS sensitive area is 11.0mm2, suitable for flame detection)
4. 10uW/cm2 peak irradiance generates approximately 65nA current (10uW/cm2 peak for SG01D-51LENS approximately 350nA)
5. High chip stability (certified by German PTB)
II. About Silicon Carbide Material (SiC)）：
SiC can withstand high-intensity radiation, visible blind, low dark current, high-speed response, and low noise attributes; these features make SiC an excellent material for visible-blind UV detectors. SiC detectors can operate at temperatures up to 170°C, and the temperature coefficient of the signal (responsivity) is also very low, <0.1%/K. Due to low noise (dark current at fA level), very low UV radiation intensities can be reliably measured (with appropriate amplifiers).
SiC photodiodes can be used as unfiltered broadband detection devices or with optical filters, providing response to UVA, UVB, and UVC bands.
III. UV Photodiode - SG01D Application Fields:
Mainly used for flame control (industrial boilers), water treatment (UV intensity insurance), UV astronomy (array detection), projectile tracking (UV cameras), ozone and pollutant monitoring, flame sensing (fire alarm safety devices, oil droplet monitoring), testing UV intensity in sunlight (gifts, cosmetics), UV lamp intensity testing (medical devices or disinfection efficiency inspection of household disinfection cabinets), etc.
IV. UV Photodiode - SG01D Technical Parameters:
| Model |
SG01D-18 |
SG01D-5LENS |
| Responsivity |
0.13A/W |
0.13A/W |
| Typical Wavelength |
280nm |
280nm |
| Wavelength Range (S=0.1*Smax) |
221-358nm |
221-358nm |
| Visible Light Rejection Ratio |
>1010 |
>1010 |
| Effective Detection Area |
0.5mm2 |
0.5mm2 (chip size) 11.0mm2 (radiation sensitive area) |
| Dark Current (1V reverse bias) |
1.7fA |
1.7fA |
| Capacitance |
125pF |
125pF |
| Short Circuit Current (10uW/cm2 peak irradiance) |
Approximately 65nA |
Approximately 350nA |
| Temperature Coefficient |
<0.1%/K |
<0.1%/K |
| Operating Temperature |
-55～+170℃ |
-55～+170℃ |
| Storage Temperature |
-55～+170℃ |
-55～+170℃ |
| Soldering Temperature (3S) |
260℃ |
260℃ |
| Reverse Voltage VRmax |
20V |
20V |
| Physical Characteristics |
TO18 metal housing sealed, 1 pin insulated, 1 pin grounded |
Built-in condenser lens, TO5 metal housing sealed, 1 pin insulated, 1 pin grounded |
